DocumentCode
3059457
Title
Subband parameters in strained (110) silicon films from the Hensel-Hasegawa-Nakayama model of the conduction band
Author
Sverdlov, Viktor ; Baumgartner, Oskar ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In this work we demonstrate that the HHN model allows to accurately describe the dependences of the subband energies and effective masses in (-110) thin silicon films. In order to do so, we appropriately rotate the HHN Hamiltonian for each pair of the valleys and resolve the subband structure numerically. The zero boundary conditions for the wave functions at the interfaces are applied.
Keywords
MOSFET; conduction bands; semiconductor thin films; Hensel-Hasegawa-Nakayama model; conduction band; strained silicon films; subband parameters; Capacitive sensors; Conductive films; Educational institutions; Effective mass; FinFETs; MOSFETs; Quantization; Semiconductor films; Silicon; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378263
Filename
5378263
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