Title :
AC analysis of UMOSFET ACCUFET
Author :
Peyvast, N. ; Fathipour, M.
Author_Institution :
Device & Process Modeling & Simulation Lab., Univ. of Tehran, Tehran, Iran
Abstract :
In this paper, the structure of a power UMOSFET ACCUFET has been investigated. For a given device length when the number of trenches is increased transconductance increases as the cut off frequency does. The effect of such a design on the conductance of the device is investigated and demonstrated that the conductance of this device can be improved by as large as 600% at the gate and drain voltage of 10 volts.
Keywords :
power MOSFET; power field effect transistors; semiconductor device models; AC analysis; power ACCUFET; power UMOSFET; voltage 10 V; Analytical models; Computational modeling; Computer simulation; Educational institutions; Electron mobility; Frequency; Proximity effect; Silicon carbide; Transconductance; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378265
