Broad bandwidth emission from hybrid QW/QD structures

Author

Chen, S. ; Peyvast, N. ; Zhou, Keliang ; Babazadeh, N. ; Zhang, Zhenhao ; Childs, D.T.D. ; Hugues, Maxime ; Wada, O. ; Hogg, R.A. ; Kageyama, T. ; Nishi, Kentaro ; Takemasa, K. ; Sugawara, Mariko

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

1

Lastpage

2

Abstract

We previously demonstrated a hybrid quantum well/quantum dot structure to enhance the gain and spontaneous emission bandwidth of a quantum dot active region. We now present new designs to further broaden the spontaneous emission from hybrid QW/QD structure. Utilizing a high junction temperature, and chirped quantum dot layers with higher areal densities, increased layer number, and increased state separation a spontaneous emission FWHM of ~350nm is achieved.

Keywords

III-V semiconductors; gallium arsenide; optical materials; semiconductor quantum dots; semiconductor quantum wells; spontaneous emission; GaAs; broad bandwidth emission; chirped quantum dot layers; high junction temperature; hybrid QW/QD structures; quantum dot active region; quantum wells; spontaneous emission bandwidth; Bandwidth; Chirp; Current density; Quantum dot lasers; Quantum dots; Spontaneous emission; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/CLEOPR.2013.6600242

Filename

6600242