Title :
Sub-1V and Sub-100μm electro-absorption modulator based on Bragg reflector waveguide
Author :
Xiaodong Gu ; Shimizu, Shogo ; Shimada, Toshikazu ; Matsutani, Akihiro ; Koyama, Fumio
Author_Institution :
Precision & Intell. Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
An ultra-compact electro-absorption GaInAs/GaAs QW modulator based on a slow-light Bragg reflector waveguide was fabricated. A low driving voltage below 0.5V was demonstrated for a 50μm long device.
Keywords :
Bragg gratings; III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; optical waveguides; semiconductor quantum wells; slow light; Bragg reflector waveguide; GaInAs-GaAs; electro-absorption modulator; optical fabrication; quantum wells; size 100 mum; size 50 mum; slow-light Bragg reflector waveguide; voltage 0.5 V; voltage 1 V; Bandwidth; Erbium; Optical interconnections; Optical modulation; Optical waveguides; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600246
