DocumentCode
3059808
Title
Sub-50μm long slow-light electro-absorption modulator laterally integrated with VCSEL
Author
Shimada, Toshikazu ; Matsutani, Akihiro ; Koyama, Fumio
Author_Institution
Photonics Integration Syst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
A compact GaInAs/GaAs electro-absorption modulator with slow-light Bragg reflector waveguide was laterally integrated with VCSEL. A driving voltage below 2V was demonstrated and a possibility of an ultra-compact modulator below 30μm was presented.
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; semiconductor lasers; slow light; surface emitting lasers; waveguide lasers; GaInAs-GaAs; VCSEL; laterally integrated slow-light electroabsorption modulator; size 50 mum; slow-light Bragg reflector waveguide; ultracompact modulator; Couplings; Extinction ratio; Modulation; Optical waveguides; Slow light; Vertical cavity surface emitting lasers; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600247
Filename
6600247
Link To Document