Title :
(110) quantum well based spin VCSELs
Author :
Kawaguchi, Hitoshi ; Koh, Shinji
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
Abstract :
A vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs) was fabricated and characterized. Circularly polarized lasing by optical pumping was demonstrated. A high degree of circular polarization, 0.94, was observed at 77 K, reflecting the long electron spin relaxation time in the (110) MQWs.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; optical pumping; polarisation; semiconductor quantum wells; surface emitting lasers; (110) multiple quantum wells; InGaAs-GaAs; circularly polarized lasing; electron spin relaxation time; optical pumping; spin VCSEL; temperature 77 K; vertical cavity surface emitting laser;
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7043-3
DOI :
10.1109/CAOL.2010.5634265
