DocumentCode
3059899
Title
(110) quantum well based spin VCSELs
Author
Kawaguchi, Hitoshi ; Koh, Shinji
Author_Institution
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
fYear
2010
fDate
10-14 Sept. 2010
Firstpage
58
Lastpage
60
Abstract
A vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs) was fabricated and characterized. Circularly polarized lasing by optical pumping was demonstrated. A high degree of circular polarization, 0.94, was observed at 77 K, reflecting the long electron spin relaxation time in the (110) MQWs.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; optical pumping; polarisation; semiconductor quantum wells; surface emitting lasers; (110) multiple quantum wells; InGaAs-GaAs; circularly polarized lasing; electron spin relaxation time; optical pumping; spin VCSEL; temperature 77 K; vertical cavity surface emitting laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7043-3
Type
conf
DOI
10.1109/CAOL.2010.5634265
Filename
5634265
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