• DocumentCode
    3059904
  • Title

    Operation temperature and T0 improvement of GaAs/AlGaAs THz QCL by utilizing higher Al composition barriers

  • Author

    Lin, T.-T. ; Hirayama, Hiroshi

  • Author_Institution
    Terahertz Quantum Device Lab., RIKEN, Sendai, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The current earnest issue of THz QCLs is their limited Tmax near 200K. Here we propose the process of operation temperature performance improvement by utilizing high Al composition in AlGaAs THz QCLs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; quantum cascade lasers; submillimetre wave lasers; GaAs-AlGaAs; composition barriers; operation temperature performance improvement; terahertz quantum cascade lasers; Gallium arsenide; Phonons; Quantum cascade lasers; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600250
  • Filename
    6600250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3059904