DocumentCode :
3059904
Title :
Operation temperature and T0 improvement of GaAs/AlGaAs THz QCL by utilizing higher Al composition barriers
Author :
Lin, T.-T. ; Hirayama, Hiroshi
Author_Institution :
Terahertz Quantum Device Lab., RIKEN, Sendai, Japan
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
The current earnest issue of THz QCLs is their limited Tmax near 200K. Here we propose the process of operation temperature performance improvement by utilizing high Al composition in AlGaAs THz QCLs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; quantum cascade lasers; submillimetre wave lasers; GaAs-AlGaAs; composition barriers; operation temperature performance improvement; terahertz quantum cascade lasers; Gallium arsenide; Phonons; Quantum cascade lasers; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6600250
Filename :
6600250
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3059904
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