DocumentCode
3059975
Title
3300 V, 30 A 4H-SiC power DMOSFETs
Author
Cheng, Lin ; Ryu, Sei-Hyung ; Jonas, Charlotte ; Dhar, Sarit ; Callanan, Robert ; Richmond, Jim ; Agarwal, Anant K. ; Palmour, John
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In summary, high-voltage 3300 V, 30 A 4H-SiC DMOSFETs are demonstrated. The device can conduct over 30 A at a power dissipation of 200 W/cm2 in the on-state and block over 3300 V with a VGS of 0 V in the off-state. The devices exhibit normally-off characteristic. More data including dynamic switching performance of the DMOSFETs will be presented at the conference.
Keywords
power MOSFET; silicon compounds; wide band gap semiconductors; SiC; current 30 A; dynamic switching performance; high-voltage; normally-off characteristic; power DMOSFET; power dissipation; voltage 3300 V; Aluminum; Avalanche breakdown; Educational institutions; Electric breakdown; MOSFETs; Packaging; Photonic band gap; Power dissipation; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378284
Filename
5378284
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