Quantum transport in patterned graphene nanoribbons

Author

Lian, Chuanxin ; Tahy, Kristof ; Fang, Tian ; Li, Guowang ; Xing, Huili Grace ; Jena, Debdeep

Author_Institution

Electr. Eng. Dept., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

The paper presents the fabrication of graphene nanoribbons (GNR) on exfoliated graphene flakes on SiO₂/Si. The Si substrate is heavily doped n-type. Al metal masks were patterned by electron beam lithography and electron beam deposition. The exposed graphene was removed by O₂ plasma etching and then the metal masks were removed by Al etchant. Quantized conductance was observed in the thin GNRs which form quasi-1D transport systems due to the carrier constriction by the ribbon edge boundaries. Landauer´s formula was applied to fit the experimental data and excellent agreement was achieved.

Keywords

carrier mobility; electron beam deposition; electron beam lithography; graphene; nanolithography; nanopatterning; silicon compounds; sputter etching; Landauer formula; SiO₂-Si; electron beam deposition; electron beam lithography; exfoliated graphene flakes; metal masks; patterned graphene nanoribbons; plasma etching; quantized conductance; quantum transport; Electron beams; Etching; Fabrication; Lithography; Plasma applications; Plasma transport processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378286

Filename

5378286