DocumentCode
3060052
Title
Characterization of W-band MMIC power amplifier using on-wafer pulsed power test
Author
Yang, D.C. ; Yang, J.M. ; Wiang, H. ; Huang, P.
Author_Institution
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1483
Abstract
A facile technique based on pulsed power test has been developed to characterize W-band MMIC power amplifiers and optimize their gain and PAE (power added efficiency) on-wafer. By suppressing thermal effects usually associated with conventional on-wafer tests, the pulsed power technique makes it possible to not only establish device binning criteria but also eliminate in-module bias tuning. It thus provides significant cost savings in volume production environments.
Keywords
MMIC power amplifiers; integrated circuit testing; millimetre wave measurement; W-band MMIC power amplifier; device binning; gain; on-wafer pulsed power test; power added efficiency; Circuit testing; Electronic equipment testing; Frequency; MMICs; Power amplifiers; Power generation; Power measurement; Pulse amplifiers; Pulse measurements; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700655
Filename
700655
Link To Document