Title :
Characterization of W-band MMIC power amplifier using on-wafer pulsed power test
Author :
Yang, D.C. ; Yang, J.M. ; Wiang, H. ; Huang, P.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A facile technique based on pulsed power test has been developed to characterize W-band MMIC power amplifiers and optimize their gain and PAE (power added efficiency) on-wafer. By suppressing thermal effects usually associated with conventional on-wafer tests, the pulsed power technique makes it possible to not only establish device binning criteria but also eliminate in-module bias tuning. It thus provides significant cost savings in volume production environments.
Keywords :
MMIC power amplifiers; integrated circuit testing; millimetre wave measurement; W-band MMIC power amplifier; device binning; gain; on-wafer pulsed power test; power added efficiency; Circuit testing; Electronic equipment testing; Frequency; MMICs; Power amplifiers; Power generation; Power measurement; Pulse amplifiers; Pulse measurements; Space technology;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700655
