A novel etching technique for crystallographic study of SiC materials

In this research, a novel etching technique using a eutectic solution consisting of potassium hydroxide (KOH), sodium hydroxide (NaOH), and magnesium oxide (MgO) was developed for the investigation of crystallographic defects in SiC materials. Compared to traditional molten KOH etching, this new eutectic etching technique provides a much better control of the etching rate that can be used to efficiently expose defects by etch pits but less destructive to sample surface, which maintains the surface roughness and integrity of SiC samples after etching.