A deterministic approach to the spatial origin of semiconductor device current noise for semiclassical transport

In this paper the authors present a deterministic approach to compute the spatial origin of current noise spectral density in semiconductor devices. The numerical solution of it is based on the spherical harmonics expansion (SHE) of the Boltzmann transport equation (BTE) in the frequency domain with special initial and boundary conditions. The salient feature of this model is that: it utilizes the SHE that is a well established technique to solve the BTE; it combines analytical and numerical methods, in contrast with the Monte Carlo approach that employs ensemble averages of randomly generated events; the model formally relies on the solution of a time-dependent transient solution of the BTE with special initial and boundary condition that is solved in the frequency domain to directly compute the terminal current noise spectral density; and the terminal current noise is directly related to particle scattering inside the device, which is accounted for in the BTE, without the need to add Langevin noise terms to the calculations.