Point and extended defects in the bulk and at the interface of GaN with metals

Author

Batyrev, Iskander G. ; Jones, Kenneth A. ; Shah, Pankaj B. ; Zheleva, Tsvetanka S.

Author_Institution

Army Res. Lab., Adelphi, MD, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

GaN devices promise advantages over other compound semiconductors that include higher power amplification, increased linearity, and less temperature dependent degradation. The enhanced concentration of defects in MOCVD (metal organic vapor deposition) grown GaN is a bottleneck for achieving these superior properties. We present results of calculations of typical point and extended defects in GaN and possible defects at the contacts of GaN with metals.

Keywords

III-V semiconductors; MOCVD; crystal defects; gallium compounds; semiconductor devices; wide band gap semiconductors; GaN; GaN devices; MOCVD; enhanced concentration; extended defects; higher power amplification; increased linearity; less temperature dependent degradation; metal organic vapor deposition; point defects; Educational institutions; Electron traps; Etching; Gallium nitride; Impurities; Iron; MOCVD; Molecular beam epitaxial growth; Photonic band gap; Stacking;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378293

Filename

5378293