Point and extended defects in the bulk and at the interface of GaN with metals

GaN devices promise advantages over other compound semiconductors that include higher power amplification, increased linearity, and less temperature dependent degradation. The enhanced concentration of defects in MOCVD (metal organic vapor deposition) grown GaN is a bottleneck for achieving these superior properties. We present results of calculations of typical point and extended defects in GaN and possible defects at the contacts of GaN with metals.