Title :
Impact of surface preparations on the transport characteristics of InxGa1−xAs metal-oxide-semiconductor field effect transistors (MOSFETs)
Author :
Sonnet, A.M. ; Galatage, R.V. ; Jivani, M.N. ; Milojevic, M. ; Kirsch, P. ; Huang, J. ; Chapman, R.A. ; Hinkle, C.L. ; Wallace, R.M. ; Vogel, E.M.
Author_Institution :
Dept. of Electr. Eng. & Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
Although III-V semiconductors have intrinsically higher electron mobility compared to Si, a high-quality gate stack with low Dit is still required to realize III-V surface channel MOSFETs. Recently, significant effort has been focused on improving high-k/III-V interfaces using different interfacial passivation layers (IPL) and surface passivation techniques. These include MBE deposition of Ga2O3(Gd2O3), deposition of amorphous Si (a-Si) IPL, SiH4-NH3 based passivation, PH3 plasma based passivation and deposition of dielectrics in direct contact with the substrate. In this work InxGa 1- x As (x=0.53, x=0.65) MOSFET transport characteristics have been studied for three different ex-situ surface passivation techniques with atomic layer deposited (ALD) HfO2 gate dielectric.
Keywords :
III-V semiconductors; MOSFET; atomic layer deposition; electron mobility; indium compounds; passivation; III-V semiconductors; InxGa1-xAs; atomic layer deposition; electron mobility; ex-situ surface passivation technique; gate dielectric; metal oxide semiconductor field effect transistors MOSFET; surface preparation; transport characteristic; Amorphous materials; Dielectric substrates; Electron mobility; High K dielectric materials; High-K gate dielectrics; III-V semiconductor materials; MOSFETs; Passivation; Plasma properties; Plasma transport processes;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378296
