DocumentCode :
3060315
Title :
Fabrication of a thin film asymmetric tunneling diode using geometric field enhancement
Author :
Choi, Kwangsik ; Dagenais, Mario ; Peckerar, Martin M.
Author_Institution :
Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, we consider a metal-insulator-metal (MIM) diode as an infrared detector. Past research has successfully demonstrated the operation of these structures at infrared frequencies with an optimized antenna-coupling scheme. Rectifying incident signals is essential for detection.
Keywords :
MIM devices; infrared detectors; semiconductor device manufacture; semiconductor diodes; thin film devices; tunnelling; antenna-coupling scheme; geometric field enhancement; infrared detector; infrared frequencies; metal-insulator-metal diode; thin film asymmetric tunneling diode; Diodes; Educational institutions; Electrodes; Etching; Fabrication; Polynomials; Testing; Transistors; Tunneling; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
Type :
conf
DOI :
10.1109/ISDRS.2009.5378297
Filename :
5378297
Link To Document :
بازگشت