Title :
Analysis of physics based model of AlGaN/GaN power HEMT with temperature compensation
Author :
Huq, Hasina F. ; Polash, Bashirul
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas-Pan American, Edinburg, TX, USA
Abstract :
An AlGaN/GaN high electron mobility transistor (HEMT) model with temperature compensation is proposed. The simulation and experimental data are in close agreement within the measured temperature range. Despite of drain current degradation, the characteristics exhibit high temperature compatibility of AlGaN/GaN HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; drain current degradation; high electron mobility transistor; power HEMT; temperature compensation; Aluminum gallium nitride; Gallium nitride; HEMTs; Physics; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378298
