• DocumentCode
    3060461
  • Title

    Retention test and electrical stress correlation to anticipate EEPROM tunnel oxide reliability issues

  • Author

    Plantier, J. ; Aziza, H. ; Portal, J.M. ; Reliaud, C. ; Regnier, A. ; Ogier, J.L.

  • Author_Institution
    STMicroelectronics, Rousset, France
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper shows how floating gate memory cells behavior during retention tests can be predicted relying on static stress tests. The electric high-field induced during write/erase cycles is mainly responsible for the retention time degradation because it creates intrinsic failures or traps in the EEPROM tunnel oxide.
  • Keywords
    EPROM; circuit reliability; correlation methods; EEPROM; correlation; electrical stress; floating gate memory cells; retention test; static stress tests; tunnel oxide reliability; write/erase cycles; Acceleration; Circuit testing; Data mining; Degradation; EPROM; Educational institutions; Probability distribution; Stress; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378306
  • Filename
    5378306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3060461