Title :
A high performance MOSFET on selective buried oxide with improved short channel effects
Author :
Qureshi, S. ; Loan, Sajad A. ; Iyer, S.S.K.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
In this paper we proposed and did an extensive simulation study of a new SELBOX device using a 2D device simulator MEDICI. The proposed structure retains all the advantages of the SELBOX structure and at the same time reduces SCEs significantly and makes further scaling of the device possible in nanometer regime. The proposed device is a partial ground plane (PGP) based MOSFET on SELBOX.
Keywords :
MOSFET; semiconductor device models; 2D device simulator; MEDICI; SELBOX; high performance MOSFET; partial ground plane; selective buried oxide; short channel effects; CMOS technology; Couplings; Educational institutions; MOS devices; MOSFET circuits; Medical simulation; Nanoscale devices; Silicon; Thermal degradation; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378308
