Plasma doping and spike annealing technique for steep SDE formation in nano-scale MOSFET

Author

Miyata, T. ; Oshima, Y. ; Hokazono, A. ; Adachi, K. ; Miyano, K. ; Tsujii, H. ; Kawanaka, S. ; Inaba, S. ; Itani, T. ; Iinuma, T. ; Toyoshima, Y.

Author_Institution

Center for Semicond. R&D, Toshiba Corp. Semicond. Co., Yokohama, Japan

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

The significance of impurity profile design for source/drain extension (SDE) is widely recognized for deeply scaled MOSFET. In this paper, novel SDE formation scheme in planar pMOSFET is discussed using plasma doping (PD) and laser spike annealing (LSA), comparing with conventional Ion Implantation (II) technique. It is found that the combination of PD and high-temperature LSA can realize the abrupt boron profile and an additive efficiency of halo doping in channel region.

Keywords

MOSFET; annealing; ion implantation; semiconductor doping; ion implantation; laser spike annealing; nano-scale MOSFET; planar pMOSFET; plasma doping; source/drain extension; steep SDE formation; Annealing; Boron; Doping profiles; Fabrication; MOSFET circuits; Plasma immersion ion implantation; Plasma materials processing; Semiconductor device doping; Temperature; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378311

Filename

5378311