Title :
Plasma doping and spike annealing technique for steep SDE formation in nano-scale MOSFET
Author :
Miyata, T. ; Oshima, Y. ; Hokazono, A. ; Adachi, K. ; Miyano, K. ; Tsujii, H. ; Kawanaka, S. ; Inaba, S. ; Itani, T. ; Iinuma, T. ; Toyoshima, Y.
Author_Institution :
Center for Semicond. R&D, Toshiba Corp. Semicond. Co., Yokohama, Japan
Abstract :
The significance of impurity profile design for source/drain extension (SDE) is widely recognized for deeply scaled MOSFET. In this paper, novel SDE formation scheme in planar pMOSFET is discussed using plasma doping (PD) and laser spike annealing (LSA), comparing with conventional Ion Implantation (II) technique. It is found that the combination of PD and high-temperature LSA can realize the abrupt boron profile and an additive efficiency of halo doping in channel region.
Keywords :
MOSFET; annealing; ion implantation; semiconductor doping; ion implantation; laser spike annealing; nano-scale MOSFET; planar pMOSFET; plasma doping; source/drain extension; steep SDE formation; Annealing; Boron; Doping profiles; Fabrication; MOSFET circuits; Plasma immersion ion implantation; Plasma materials processing; Semiconductor device doping; Temperature; Very large scale integration;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378311
