Title :
Photonic crystal surface emitting lasers based on epitaxial regrowth
Author :
Taylor, R.J.E. ; Williams, D.M. ; Shepherd, L.R. ; Childs, D.T.D. ; Stevens, B.J. ; Khamas, S. ; Groom, K.M. ; Hogg, R.A. ; Ikeda, N. ; Sugimoto, Yoshiki
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fDate :
June 30 2013-July 4 2013
Abstract :
Design optimization of semiconductor photonic crystal laser (PCSEL) structure is discussed Mode confinement is compared for all-semiconductor and void PCSELs. A re-grown PCSEL, lasing at room-temperature based on GaAs/InGaP re-growth is realised, and device characteristics are described.
Keywords :
epitaxial growth; laser modes; photonic crystals; semiconductor growth; semiconductor lasers; surface emitting lasers; GaAs-InGaP; PCSEL; design optimization; epitaxial regrowth; mode confinement; photonic crystal surface emitting lasers; semiconductor photonic crystal laser; Couplings; Photonic crystals; Refractive index; Semiconductor waveguides; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600281
