DocumentCode :
3060833
Title :
Compound semiconductor nanowires for optoelectronic devices
Author :
Gao, Q. ; Jiang, N. ; Joyce, H. ; Paiman, S. ; Wong-Leung, J. ; Lee, Young-Hyun ; Fu, L. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
We review various III-V compound semiconductor nanowires grown by MOCVD, mainly focusing on their phase control, optical and structural properties and some prototype optoelectronic devices based on these nanowires including solar cells and lasers.
Keywords :
III-V semiconductors; MOCVD; nanowires; optoelectronic devices; semiconductor lasers; solar cells; III-V compound semiconductor nanowires; MOCVD; lasers; optoelectronic devices; phase control; solar cells; Charge carrier lifetime; Crystals; Gallium arsenide; Gold; Indium phosphide; Nanowires; Photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6600288
Filename :
6600288
Link To Document :
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