Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers

Author

Liao, Sicheng ; Sun, Ke ; Dutta, Mitra ; Stroscio, Michael A.

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

Recently a new photodetector design based on quantum dots and resonant-tunneling diode (QDRTD) was proposed by Shields et al. which demonstrated high detection efficiency and a resolution to the single photon level. Different from the avalanche photo diode (APD) based photodetector, the detection mechanism of this device is to sense the change of the resonant tunneling current across the double barrier quantum well (DBQW) caused by the capture of photon-generated holes by a layer of self-assembled quantum dots (QDs) adjacent to the quantum well.

Keywords

avalanche photodiodes; photodetectors; resonant tunnelling diodes; semiconductor quantum dots; semiconductor quantum wells; avalanche photo diode; conductive polymers; double barrier quantum well; photodetector; quantum dots; resonant-tunneling diodes; Absorption; Diodes; Educational institutions; Electron emission; Photodetectors; Polymers; Quantum computing; Quantum dots; Resonance; Resonant tunneling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378324

Filename

5378324