A nonlinear model of the power MESFET including temperature and breakdown effects

Author

Rizzoli, V. ; Costanzo, A. ; Cecchetti, C. ; Chiarini, A.

Author_Institution

Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1603

Abstract

The paper discusses a new large-signal MESFET model based on DC, S-parameter and nonlinear measurements. Physical constraints incorporated in the constitutive relations guarantee the model consistency in large-signal operation and improve the reliability of the parameter extraction process. Forward and reverse (breakdown) gate conduction effects are modeled from nonlinear data. Extensive comparisons with experimental results are presented.

Keywords

S-parameters; electric breakdown; equivalent circuits; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; DC measurements; S-parameter measurements; breakdown effects; forward gate conduction effects; large-signal MESFET model; nonlinear measurements; nonlinear model; parameter extraction process; power MESFET; reverse gate conduction effects; temperature effects; Circuit simulation; Data mining; Electric breakdown; MESFETs; Microwave devices; Parameter extraction; Scattering parameters; Temperature; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700683

Filename

700683