Effect of input harmonic terminations on high efficiency class-B and class-F operation of PHEMT devices

Author

White, P.M.

Author_Institution

Raytheon Microelectron., Andover, MA, USA

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1611

Abstract

Device level harmonic balance simulations are used to show that very high efficiency can be achieved in PHEMT class-B and class-F amplifiers if efforts are made to provide proper input as well as output harmonic terminations. The simulations use a gate capacitance model which accurately describes the C/sub gs/ versus V/sub gs/ dependence for the PHEMT and are illustrated with waveform and dynamic loadline plots which relate directly to the idealized textbook view of high efficiency operation.

Keywords

capacitance; equivalent circuits; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power HEMT; semiconductor device models; PHEMT devices; class-B operation; class-F operation; device level harmonic balance simulations; dynamic loadline plots; gate capacitance model; high efficiency operation; input harmonic terminations; power devices; pseudomorphic HEMT; waveform plots; Capacitance; Circuit simulation; FETs; MESFETs; Microelectronics; Operational amplifiers; PHEMTs; Power system harmonics; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700685

Filename

700685