Title :
Improvements on a GaAs MESFET model for nonlinear RF simulations
Author :
Ellinger, F. ; Kucera, J. ; Baechtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
A modified GaAs MESFET-model has been developed to improve accuracy over a large bias range, particularly within the linear region. The enhancements consist of a modified Statz equation for the gate charge to improve the modeling of the gate drain capacitance, and an equation for the bias dependent drain source resistance for exact modeling of the dispersive output conductance.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; capacitance; equivalent circuits; gallium arsenide; microwave field effect transistors; GaAs; GaAs MESFET model; bias dependent drain source resistance; dispersive output conductance; gate charge; gate drain capacitance; large bias range; linear region; modified Statz equation; nonlinear RF simulations; Analytical models; Capacitance; Circuit simulation; Dispersion; Equations; Gallium arsenide; Integrated circuit modeling; MESFETs; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700688
