Title :
1240-nm distributed-feedback lasers with high-density InAs/GaAs quantum dots
Author :
Takada, Kazumasa ; Kageyama, T. ; Kondo, Hiroki ; Mochida, Reio ; Maeda, Yuji ; Nishi, Kentaro ; Takemasa, K. ; Yamamoto, Takayuki ; Sugawara, Mariko ; Arakawa, Yasuhiko
Author_Institution :
QD Laser Inc., Kawasaki, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
1240-nm quantum-dot (QD) distributed-feedback (DFB) lasers are developed for the optical time-domain reflectometer. Fabricated DFB lasers with high-density QDs show excellent temperature-stable lasing characteristics in single-longitudinal-mode operation between 0°and 70°C.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical time-domain reflectometry; quantum dot lasers; semiconductor quantum dots; DFB lasers; InAs-GaAs; InAs-GaAs quantum dots; distributed-feedback lasers; optical time-domain reflectometer; quantum dot lasers; single-longitudinal-mode operation; wavelength 1240 nm; Fiber lasers; Gallium arsenide; Laser applications; Quantum dot lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600301
