DocumentCode
3061144
Title
Organic field-effect transistor sensors with dual responses to dinitrotoluene
Author
Dawidczyk, Thomas J. ; Huang, Jia ; Sun, Jia ; Shastry, Tejas ; Mason, Andrew ; Katz, Howard E.
Author_Institution
Dept. of Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
This paper presents an organic field effect transistor for the detection of dinitrotoluene (DNT). DNT is a common explosive simulant or a by-product of trinitrotoluene (TNT). The sensors in this work were exposed to dinitrotoluene (DNT). The electron withdrawing nitro group allows OFETs to be used as sensors. Both n-channel (electron carrying) and p-channel (hole carrying) transistors were tested and gave varying responses to DNT vapors.
Keywords
chemical sensors; explosives; military equipment; organic field effect transistors; DNT; OFET; charge carrier; dinitrotoluene detection; organic field effect transistor sensor; Biosensors; Educational institutions; Electrons; Explosives; FETs; OFETs; Organic semiconductors; Semiconductor device doping; Sensor arrays; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378334
Filename
5378334
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