• DocumentCode
    3061226
  • Title

    Directly InGaN-laser diode pumped Ti:Sapphire laser

  • Author

    Sawai, Shota ; Kawauchi, Hikaru ; Hirosawa, Kenichi ; Kannari, Fumihiko

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ~100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.
  • Keywords
    laser transitions; optical pumping; sapphire; solid lasers; titanium; Al2O3:Ti; CW lasing; figure-of-merit; laser diode pumped titanium-sapphire laser; laser transition; power 28.6 mW; size 2.5 mm; wavelength 800 nm; Crystals; Laser excitation; Laser mode locking; Pump lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600309
  • Filename
    6600309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3061226