DocumentCode
3061240
Title
Effect of pre-cleaning on the formation of low resistance Ni-silicide from atomic layer deposited nickel film
Author
Ha, Jong-Bong ; Kang, Hee-Sung ; Lee, Sung-Gil ; Lee, Jung-Hee
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
We present for the first time a detailed study on the effect of various pre-cleaning methods on the formation of the low resistance Ni-silicide from the nickel film deposited by ALD system. Four types of samples were prepared on 6 inch p-type Si (100) wafers.
Keywords
atomic layer deposition; nickel; semiconductor thin films; silicon compounds; surface cleaning; ALD; atomic layer deposited nickel film; low resistance; pre-cleaning methods; size 6 inch; Atomic layer deposition; Contact resistance; Dry etching; Electric resistance; Nickel; Rough surfaces; Silicides; Surface morphology; Surface resistance; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378339
Filename
5378339
Link To Document