DocumentCode :
3061353
Title :
Leakage current quenching and lifetime enhancement in 3D pillar structured silicon PIN diodes
Author :
Shao, Q. ; Conway, A.M. ; Voss, L.F. ; Heineck, D.P. ; Reinhardt, C.E. ; Graff, R.T. ; Nikolic, R.J.
Author_Institution :
Lawrence Livermore Nat. Lab., Livermore, CA, USA
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
1
Lastpage :
2
Abstract :
Structures containing three dimensional (3D) pillars, wires and tubes have applications in sensors, photodetectors as well as solar cells. We have been developing a thermal neutron detector by utilizing a 3D pillar architecture where the pillars are constructed out of a PIN diode material, and filling this structure with a neutron sensitive material,10B . By optimizing the pillar diameter, spacing and height, neutron detection efficiency > 50% is possible. However, the large surface-to-volume ratio resulting from the 3D design can result in a high reverse leakage current, which results in a high noise floor for the device, causing a decrease in detector efficiency. Here we report passivation methods to reduce the leakage current by passivating the sidewall surface by wet chemical treatments and oxidation.
Keywords :
elemental semiconductors; leakage currents; neutron detection; oxidation; p-i-n diodes; passivation; silicon; 3D pillar architecture; Si; leakage current quenching; oxidation; passivation method; silicon PIN diode; surface-to-volume ratio; thermal neutron detector; wet chemical treatment; Detectors; Filling; Leakage current; Neutrons; Photodetectors; Photovoltaic cells; Signal to noise ratio; Silicon; Surface treatment; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
Type :
conf
DOI :
10.1109/ISDRS.2009.5378343
Filename :
5378343
Link To Document :
بازگشت