DocumentCode
3061459
Title
Development of cryogenic load-pull analysis: power amplifier technology performance trends
Author
Gebara, E. ; Laskar, J. ; Harris, M. ; Kikel, T.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1663
Abstract
On-wafer load-pull measurements at cryogenic temperatures are made for the first time on FET power amplifier structures to demonstrate the improved performance when operated at reduced temperatures. Measurements from 300 K to 17 K demonstrate improvements in both efficiency (40-80%) and output power (1.0-2.7 dB). These results demonstrate that advanced device technologies that are optimized for cooled operation may provide significantly enhanced system performance and reliability with a minimal increase in prime power.
Keywords
cryogenic electronics; field effect transistor circuits; power amplifiers; 40 to 80 percent; FET power amplifier; cryogenic load-pull analysis; Cryogenics; Gallium arsenide; MESFETs; Performance analysis; Phased arrays; Power amplifiers; Power generation; Power measurement; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700698
Filename
700698
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