Reconfigurable RF power amplifiers for wireless transmitters

Author

Bukvic, B. ; Neskovic, N. ; Budimir, D.

Author_Institution

Sch. of Electr. Eng., Univ. of Belgrade, Belgrade, Serbia

fYear

2012

fDate

20-22 Nov. 2012

Firstpage

373

Lastpage

375

Abstract

In this paper, a reconfigurable input matching network (IMN) is used to obtain reconfigurable RF power amplifier (RPA). An Input Matching Network is realized as simple T-section, where reconfigurability is achieved by switch in shunt transmission line. An optical switch (OS) and a PIN diode are used separately, and results are presented for both cases. When an OS or a PIN diode switch is ON, RPA operates at 1.9 GHz, otherwise RPA operates at 2.2 GHz. An Output Matching Network (OMN) is realized as wideband circuit. A Cree´s CGH21240 AWR Microwave Office (MWO) model of wideband transistor is used for RPAs. The S-parameters and power added efficiency (PAE) of about 50% and 35% at 1.9 GHz and 2.2 GHz, respectively, for both types of RPAs are presented.

Keywords

optical switches; p-i-n diodes; power amplifiers; radio transmitters; transmission lines; AWR microwave office; IMN; MWO model; OMN; PIN diode; RPA; input matching network; optical switch; output matching network; reconfigurable RF power amplifiers; shunt transmission line; wideband transistor; wireless transmitters; Microwave amplifiers; Microwave circuits; Optical switches; PIN photodiodes; Power amplifiers; Radio frequency; Scattering parameters; PIN diodes; optical switchs; reconfigurable RF power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Forum (TELFOR), 2012 20th

Conference_Location

Belgrade

Print_ISBN

978-1-4673-2983-5

Type

conf

DOI

10.1109/TELFOR.2012.6419225

Filename

6419225