• DocumentCode
    3061534
  • Title

    Dependence on repetition rate in post-laser annealing process of ion-implanted ZnO nanorods using KrF excimer laser

  • Author

    Shimogaki, T. ; Ofuji, T. ; Higashihata, M. ; Ikenoue, Hiroshi ; Nakamura, Daisuke ; Asano, Takashi ; Okada, Takashi

  • Author_Institution
    Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    P-implanted ZnO nanorods were annealed by a KrF excimer laser at different repetition rate. The entire implanted region of ZnO nanorods was annealed beyond the optical-absorption length at high repetition rate.
  • Keywords
    II-VI semiconductors; excimer lasers; ion implantation; laser beam annealing; nanorods; wide band gap semiconductors; zinc compounds; KrF; ZnO:P; excimer laser; ion implantation; nanorods; optical-absorption length; post-laser annealing; repetition rate; Annealing; Laser theory; Optical device fabrication; Optical pulses; Scanning electron microscopy; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600321
  • Filename
    6600321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3061534