Title :
X-band InGaP PHEMTs with 70% power-added efficiency
Author :
Ming-Yih Kao ; Beam, E.A., III ; Saunier, P. ; Frensley, W.R.
Author_Institution :
TriQuint Semicond. Inc., Dallas, TX, USA
Abstract :
This paper describes the low-noise and power performance of InGaP/InGaAs PHEMTs lattice-matched to GaAs substrates. The 0.15-/spl mu/m/spl times/600-/spl mu/m PHEMTs exhibited extrapolated f/sub t/ and f/sub max/ of 70- and 150-GHz, respectively. At 10-GHz, 200-/spl mu/m devices yielded a low noise figure of 0.58-dB with very high associated gain. Furthermore, we have also demonstrated output power of 27-dBm, P.A.E. of 70.1%, and power gain of 13.2-dB at 9-GHz on a 1200-/spl mu/m gate width InGaP PHEMT. This is the first reported demonstration of excellent low-noise and power performance at microwave frequencies from PHEMT with an InGaP Schottky barrier.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; 0.15 micron; 0.58 dB; 13.2 dB; 70 percent; 9 to 150 GHz; InGaP-InGaAs; Schottky barrier; X-band InGaP PHEMT; microwave frequency; noise figure; output power; power gain; power-added efficiency; Epitaxial growth; Etching; Gallium arsenide; Indium gallium arsenide; Inductors; Molecular beam epitaxial growth; Noise figure; PHEMTs; Schottky barriers; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700700
