DocumentCode :
3062190
Title :
Multiple error-correcting WOM-codes
Author :
Yaakobi, Eitan ; Siegel, Paul H. ; Vardy, Alexander ; Wolf, Jack K.
Author_Institution :
Univ. of California, San Diego, La Jolla, CA, USA
fYear :
2010
fDate :
13-18 June 2010
Firstpage :
1933
Lastpage :
1937
Abstract :
A Write Once Memory (WOM) is a storage medium with binary memory elements, called cells, that can change from the zero state to the one state only once. Examples of WOMs are punch cards, optical disks, and more recently flash memories. WOM-codes were first presented by Rivest and Shamir and are designed for efficiently storing and updating data in the WOM. A WC[n, k, t] WOM-Code CW is a coding scheme for storing k information bits in n cells t times. At each write, the state of each cell can be changed, provided that the cell is changed from the zero state to the one state. The WOM-Rate of CW, defined to be Rt(CW) = kt/n, indicates the total amount of information that is possible to store in a cell in t writes. Two WOM-code constructions that can correct a single cell-error were presented by Zémor and Cohen. In this paper, we present another construction of a single-error-correcting WOM-codes with a better WOM-rate. Our construction can be adjusted also for single-error-detection, double-error-correction, and triple-error-correction. For the latter case, we use triple-error-correcting BCH-like codes, which were showed by Kasami and more recently described again by Bracken and Helleseth.
Keywords :
BCH codes; error correction codes; write-once storage; binary memory element; double-error-correction; multiple error-correcting WOM-codes; single-error-correcting WOM-code; storage medium; triple-error-correcting BCH-like code; write once memory; Atom optics; Electron optics; Flash memory; Lifting equipment; Linear code; Nonvolatile memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Theory Proceedings (ISIT), 2010 IEEE International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-7890-3
Electronic_ISBN :
978-1-4244-7891-0
Type :
conf
DOI :
10.1109/ISIT.2010.5513373
Filename :
5513373
Link To Document :
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