A 4 GSa/s, 16-GHz input bandwidth master-slave track-and-hold amplifier in InP DHBT technology

Author

Deza, J. ; Ouslimani, A. ; Konczykowska, Agnieszka ; Kasbari, A. ; Godin, J.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2012

fDate

20-22 Nov. 2012

Firstpage

502

Lastpage

505

Abstract

A fully differential master-slave track-and-hold amplifier is designed and fabricated with a 320-GHz-f_T-InP DHBT process. This circuit shows an input bandwidth of 16 GHz and a -3.5 dB forward gain. At 4 GSa/s and for a -4 dBm single-ended input signal, the circuit has a total harmonic distortion lower than -57 dB and -38.6 dB respectively at low frequency and up to 10 GHz. Time domain measurement at 4 GSa/s is also presented.

Keywords

IV-VI semiconductors; amplifiers; harmonic distortion; heterojunction bipolar transistors; indium compounds; sample and hold circuits; time-domain analysis; DHBT process; DHBT technology; bandwidth 16 GHz; forward gain; frequency 320 GHz; fully differential master-slave track-and-hold amplifier; harmonic distortion; input bandwidth master-slave track-and-hold amplifier; single-ended input signal; time domain measurement; Bandwidth; DH-HEMTs; Gain; Harmonic analysis; Indium phosphide; Total harmonic distortion; ADC; DHBT; InP; Switched Emitter Follower; Track&Hold Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Forum (TELFOR), 2012 20th

Conference_Location

Belgrade

Print_ISBN

978-1-4673-2983-5

Type

conf

DOI

10.1109/TELFOR.2012.6419257

Filename

6419257