DocumentCode
3062277
Title
MMIC-compatible terminal protection device
Author
Kaul, R. ; McAdoo, J. ; Bollen, W.M. ; Catoe, W.
Author_Institution
Army Res. Lab., Adelphi, MD, USA
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1679
Abstract
A low-cost terminal protection device (TPD) employing only five components has been demonstrated that is compatible with monolithic microwave integrated circuits (MMICs) and suitable for phased-array applications. Using a standard low-noise, depletion-mode MESFET (metal semiconductor field-effect transistor) across a 50-/spl Omega/ line, the TPD achieves a small-signal insertion loss less than 1 dB up to 3 GHz. With a single stage, the TPD attenuated 20-W pulses by 14 dB and 500-W pulses by 23 dB. Spike leakage was less than 0.1 /spl mu/J.
Keywords
MMIC; Schottky gate field effect transistors; phased array radar; protection; 1 dB; 20 to 500 W; 3 GHz; MMIC; depletion-mode MESFET; front end; microwave pulse attenuation; phased array radar; small-signal insertion loss; spike leakage; terminal protection device; Capacitance; Circuits; FETs; Field effect MMICs; Insertion loss; MESFETs; Power transmission lines; Protection; Pulse measurements; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700702
Filename
700702
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