Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs

Author

Jagadish, C. ; Tan, H.H. ; Krotkus, A. ; Marcinkevicius, S. ; Korona, K. ; Jasinski, J. ; Kaminska, M.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

41

Lastpage

44

Abstract

The lifetime and resistivity of semi-insulating GaAs implanted with various ions at MeV energies and doses and subsequently annealed at 600°C are studied and correlated with the structural and strain field properties. Very short lifetimes were achievable in all samples implanted with As, Ga, Si or O ions. However, high resistivity was only achievable in cases where the implanted ions were not electrically activated as dopants after annealing. In the case of O implants, extremely high resistivity was obtained, presumably due to the additional deep levels associated with O

Keywords

III-V semiconductors; annealing; arsenic; carrier lifetime; carrier mobility; electrical resistivity; gallium; gallium arsenide; ion implantation; oxygen; semiconductor doping; silicon; 600 C; GaAs:O,Si,As,Ga; MeV energy ion implanted GaAs; annealed; deep levels; high resistivity; lifetime; strain field properties; ultrafast carrier trapping; Annealing; Capacitive sensors; Conducting materials; Conductivity; Gallium arsenide; Implants; Physics; Power engineering and energy; Semiconductor materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570873

Filename

570873