The challenges for physical limitations in Si microelectronics

Author

Wang, Yangyuan ; Han, Ruqi ; Liu, Xiaoyan ; Kang, Jinfeng

Author_Institution

Inst. of Microelectron, Peking Univ., Beijing, China

fYear

1998

fDate

1998

Firstpage

25

Lastpage

30

Abstract

The challenges in further development of Si microelectronics especially MOSFETs into the sub 0.1 μm regime in light of fundamental physical effects and practical consideration are discussed. The key issues of physical limitations in Si microelectronics includes: fundamental physical limitations, material limitations, technology limitations, devices limitations, circuits and system limitations. Several potential alternative devices that may takes us to the outermost limitations of Si MOSFET´s scaling down, such as single electron devices are introduced

Keywords

VLSI; elemental semiconductors; high field effects; integrated circuit reliability; integrated circuit technology; monolithic integrated circuits; nanotechnology; quantum well devices; silicon; single electron transistors; 0.1 micron; MOSFET scaling down; Si; Si microelectronics; circuit limitations; deep submicron technology; device limitations; fundamental physical limitations; material limitations; physical limitations; quantum electronic devices; single electron devices; system limitations; technology limitations; CMOS technology; Circuits and systems; Crystalline materials; Dielectric materials; Integrated circuit technology; Microelectronics; Semiconductor materials; Silicon; Switches; Thermodynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785776

Filename

785776