• DocumentCode
    3062601
  • Title

    Photocurrent generation in a silicon waveguide integrated with periodically interleaved p-n junctions

  • Author

    Haike Zhu ; Linjie Zhou ; Xiaomeng Sun ; Jingya Xie ; Zhi Zou ; Liangjun Lu ; Xinwan Li ; Jianping Chen

  • Author_Institution
    Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigate the photocurrent generation in a silicon waveguide embedded with interleaved p-n junctions. Due to the surface-state absorption and the high built-in electrical-field, the responsivity reaches ~14.9 mA/W and the bandwidth is 11.5 GHz.
  • Keywords
    optical waveguides; photoelectricity; silicon; Si; bandwidth 11.5 GHz; built-in electrical field; optical waveguide; periodically interleaved p-n junctions; photocurrent generation; surface state absorption; Optical waveguides; P-n junctions; Photoconductivity; Photodetectors; Silicon; Surface waves; Waveguide junctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600365
  • Filename
    6600365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3062601