The effect of cobalt salicide on SOI CMOS radiation characteristics

Author

Zhang, Xing ; Xi, Xuemei ; Huang, Ru ; Wang, Yangyuan

Author_Institution

Inst. of Microelctron., Peking Univ., Beijing, China

fYear

1998

fDate

1998

Firstpage

59

Lastpage

62

Abstract

In this paper we present the total dose radiation characterization of CMOS/SIMOX devices with CoSi₂ salicide. Various SIMOX devices, such as with or without CoSi₂, are applied during irradiation in order to define the better radiation hardened process for SOI MOSFETs and ring oscillators. As the experimental results show, the application of Co salicide on SOI CMOS circuits not only reduces the source/drain series resistance, but also improves significantly the SOI radiation hardness properties in terms of threshold voltage shift, junction leakage and CMOS ring oscillator propagation delay

Keywords

CMOS integrated circuits; SIMOX; cobalt compounds; integrated circuit metallisation; radiation hardening (electronics); CMOS/SIMOX devices; Co salicide process; CoSi₂; CoSi₂ metallisation; SOI CMOS radiation characteristics; SOI MOSFETs; Si; junction leakage; radiation hardened process; ring oscillator propagation delay; source/drain series resistance reduction; threshold voltage shift; total dose radiation characterization; CMOS process; Cobalt; MOSFET circuits; Military aircraft; Oxidation; Propagation delay; Ring oscillators; Silicon; Space technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785789

Filename

785789