Fabrication and testing of integrated ferroelectric capacitors [non-volatile memories]

Author

Yao Haiping ; Qi, Zliong ; Guobao, Jiang ; Weining, Huang ; Xiaojing, Hong ; Tingao, Tang

Author_Institution

Dept. of Electron. Eng., Fudan Univ., Shanghai, China

fYear

1998

fDate

1998

Firstpage

63

Lastpage

66

Abstract

Ferroelectric thin film can be used to fabricate non-volatile memories (FRAM). FRAM based on ferroelectric polarization has a much superior performance compared with that of EEPROM. The key technology of making FRAM is to form integrated ferroelectric thin film capacitors of good quality. One practical approach of forming integrated ferroelectric capacitors on CMOS circuits is described

Keywords

CMOS memory circuits; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; integrated circuit testing; integrated memory circuits; random-access storage; thin film capacitors; CMOS circuits; FRAM; fabrication; ferroelectric RAM; ferroelectric thin film; integrated ferroelectric capacitors; nonvolatile memories; testing; thin film capacitors; Capacitors; EPROM; Fabrication; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Testing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785791

Filename

785791