Title :
Low-ohmic contacts by excimer laser annealing of implanted polysilicon
Author :
Pen, Q.W. ; van den Berg, M.R. ; Nanvpr, L.K. ; Slabbekoorn, John ; Visser, C.C.G.
Author_Institution :
Lab. of ECTM, Delft Univ. of Technol., Netherlands
Abstract :
High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low os 50 Ω/□ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to implanted junctions elevated by a polysilicon layer. The influence of the thickness of either the poly or the underlying oxide is evaluated
Keywords :
CVD coatings; arsenic; elemental semiconductors; ion implantation; laser beam annealing; ohmic contacts; phosphorus; semiconductor doping; silicon; Si:As; Si:P; dopant activation; excimer laser annealing; implanted junctions; implanted polysilicon; layer thickness; low-ohmic contacts; sheet resistance; Annealing; Contact resistance; Germanium silicon alloys; Laser beams; Ohmic contacts; Power lasers; Pulsed laser deposition; Silicon germanium; Surface emitting lasers; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785811
