DocumentCode
3062860
Title
Low-ohmic contacts by excimer laser annealing of implanted polysilicon
Author
Pen, Q.W. ; van den Berg, M.R. ; Nanvpr, L.K. ; Slabbekoorn, John ; Visser, C.C.G.
Author_Institution
Lab. of ECTM, Delft Univ. of Technol., Netherlands
fYear
1998
fDate
1998
Firstpage
102
Lastpage
105
Abstract
High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low os 50 Ω/□ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to implanted junctions elevated by a polysilicon layer. The influence of the thickness of either the poly or the underlying oxide is evaluated
Keywords
CVD coatings; arsenic; elemental semiconductors; ion implantation; laser beam annealing; ohmic contacts; phosphorus; semiconductor doping; silicon; Si:As; Si:P; dopant activation; excimer laser annealing; implanted junctions; implanted polysilicon; layer thickness; low-ohmic contacts; sheet resistance; Annealing; Contact resistance; Germanium silicon alloys; Laser beams; Ohmic contacts; Power lasers; Pulsed laser deposition; Silicon germanium; Surface emitting lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785811
Filename
785811
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