Dip-shaped AlGaN/AlN quantum well structures with high TE-polarized optical gain

Author

Seoung-Hwan Park ; Joing-In Shim

Author_Institution

Dept. of Electron. Engeering, Catholic Univ. of Daegu, Hayang, South Korea

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

1

Lastpage

2

Abstract

Optical gain characteristics of dip-shaped AlGaN/AlN quantum well (QW) structures in deep-ultraviolet (UV) spectral region were investigated using non-Markovian model with the many-body effect. For a high Al composition of 0.85, the conventional AlGaN/AlN QW structure shows that TM-polarization is dominant. On the other hand, with the inclusion of the lower bandgap AlGaN layer, the polarization property changes from TM-polarization to TE-polarization with a small wavelength change.

Keywords

III-V semiconductors; aluminium compounds; effective mass; gallium compounds; light polarisation; many-body problems; semiconductor quantum wells; ultraviolet spectra; wide band gap semiconductors; AlGaN-AlN; TE-polarized optical gain; TM-polarization; deep-ultraviolet spectral region; dip-shaped quantum well structures; effective-mass theory; many-body effect; nonMarkovian model; optical gain characteristics; Aluminum gallium nitride; Biomedical optical imaging; Electron optics; III-V semiconductor materials; Light emitting diodes; Optical polarization; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/CLEOPR.2013.6600378

Filename

6600378