DocumentCode :
3062929
Title :
Fundamentals of CMP for IC manufacturing: recent progress
Author :
Shi, Frank G. ; Zhao, Bin
Author_Institution :
Sch. of Eng., California Univ., Irvine, CA, USA
fYear :
1998
fDate :
1998
Firstpage :
113
Lastpage :
115
Abstract :
Preston´s equation, constituting the current basis for CMP process control and consumables development in IC manufacturing, was demonstrated recently to be fundamentally flawed for polishing with soft pads which are usually used in the IC industry. In contrast to the conventional Preston´s equation, the pressure dependence of the removal rate (RR) for CMP with soft pads was found to be sublinear, i.e., RR∝P2/3. This paper summarizes this and our other recent progress in CMP fundamentals for IC manufacturing
Keywords :
chemical mechanical polishing; integrated circuit interconnections; integrated circuit manufacture; process control; semiconductor process modelling; IC manufacturing; Preston´s equation; chemical mechanical polishing; pressure dependence; process control; removal rate; soft pads; Abrasives; Atom optics; Difference equations; Electrical equipment industry; Industrial control; Manufacturing industries; Manufacturing processes; Planarization; Process control; Semiconductor device manufacture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
Type :
conf
DOI :
10.1109/ICSICT.1998.785814
Filename :
785814
Link To Document :
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