The resistance characteristics of the Ni-Cr thin films and their influence on the integrated circuits

Author

Zhao, Lixin ; Shen, Guangdi ; Gao, Guo ; Xu, Chen ; Du, Jinyu ; Zou, Deshu ; Chen, Jianxin

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

1998

fDate

1998

Firstpage

123

Lastpage

126

Abstract

Ni-Cr thin films with different thicknesses have been fabricated on the dielectric substrate silicon dioxide (SiO₂) by using magnetron sputtering and vacuum evaporation and annealed at different temperatures. The sheet resistance and the strip line microwave impedance of the Ni-Cr thin film are measured. The results show that they are influenced strongly by the thickness and the annealing temperature. These problems are analyzed in detail including the effects of the carrier tunnel transport, the oxidation, the condensation and the stabilization in the thin film

Keywords

annealing; chromium alloys; electrical resistivity; high-frequency effects; integrated circuit interconnections; metallic thin films; nickel alloys; oxidation; sputtered coatings; tunnelling; vacuum deposited coatings; Ni-Cr; Ni-Cr thin films; SiO₂; annealing temperature; carrier tunnel transport; condensation; dielectric substrate; integrated circuits; magnetron sputtering; oxidation; resistance characteristics; sheet resistance; silicon dioxide; stabilization; strip line microwave impedance; vacuum evaporation; Annealing; Dielectric substrates; Dielectric thin films; Impedance; Semiconductor thin films; Silicon compounds; Sputtering; Strips; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785817

Filename

785817