Title :
Investigation of KOH anisotropic etching of Si <100> wafers for improving etched surface quality
Author :
Wei, Wang ; Xiaowei, Liu ; Xilian, Wang ; Yuqiang, Liu ; Maojun, Fan
Author_Institution :
Microelectron. Center, Harbin Inst. of Technol., China
Abstract :
The main influences of KOH anisotropic etching of Si ⟨100⟩ wafers on etched surface flatness are investigated experimentally. In the Si membrane etching with Si3N4 mask, the Si3N4 etching and the sediments in KOH aqueous solution are found as the main influences. The effective method to improve surface quality is presented by the mechanism analysis
Keywords :
elemental semiconductors; etching; masks; silicon; surface topography; KOH; KOH anisotropic etching; KOH aqueous solution; Si; Si ⟨100⟩ wafers; Si membrane; Si3N4; Si3N4 mask; etched surface quality; sediments; surface flatness; Anisotropic magnetoresistance; Biomembranes; Etching; History; Micromachining; Microsensors; Sediments; Silicon; Stress; Surface treatment;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785819
