• DocumentCode
    3063008
  • Title

    Investigation of KOH anisotropic etching of Si <100> wafers for improving etched surface quality

  • Author

    Wei, Wang ; Xiaowei, Liu ; Xilian, Wang ; Yuqiang, Liu ; Maojun, Fan

  • Author_Institution
    Microelectron. Center, Harbin Inst. of Technol., China
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    The main influences of KOH anisotropic etching of Si ⟨100⟩ wafers on etched surface flatness are investigated experimentally. In the Si membrane etching with Si3N4 mask, the Si3N4 etching and the sediments in KOH aqueous solution are found as the main influences. The effective method to improve surface quality is presented by the mechanism analysis
  • Keywords
    elemental semiconductors; etching; masks; silicon; surface topography; KOH; KOH anisotropic etching; KOH aqueous solution; Si; Si ⟨100⟩ wafers; Si membrane; Si3N4; Si3N4 mask; etched surface quality; sediments; surface flatness; Anisotropic magnetoresistance; Biomembranes; Etching; History; Micromachining; Microsensors; Sediments; Silicon; Stress; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785819
  • Filename
    785819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063008