Title :
Study of light emission polarization properties of semipolar InGaN/GaN quantum well under different strain conditions
Author :
Shu-ting Yeh ; Yuh-Renn Wu
Author_Institution :
Dept. of Electr. Eng., Univ., Taipei, Taiwan
fDate :
June 30 2013-July 4 2013
Abstract :
In this paper, we analyze the optical anisotropic behavior for the (1122), and (2021)-plane semipolar InGaN/GaN single QW light emitting diodes (LEDs). The light emission polarization ratios of the (1122), and (2021)-plane semipolar InGaN/GaN LEDs with different In compositions and strain relaxation were studied. Our results provide an useful information for designing the semipolar (1122), and (2021)-plane InGaN/GaN quantum well.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; light emission polarization properties; light emitting diodes; optical anisotropic behavior; semipolar quantum well; strain relaxation; Gallium nitride; Indium; Light emitting diodes; Optical device fabrication; Optical polarization; Strain;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600384
