DocumentCode :
3063039
Title :
Fiber-optic photoluminescence measurement system for evaluation of InGaN/GaN LED epi-wafer morphology
Author :
Woohyun Jung ; Jongki Kim ; Hang-Eun Joe ; Byung-Kwon Min ; Kyunghwan Oh
Author_Institution :
Inst. of Phys. & Appl. Phys., Yonsei Univ., Seoul, South Korea
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
We proposed a compact and simple photoluminescence measurement system based on fiber-optic probes that can be scanned over a wide area with a high spatial resolution. We applied the system in morphological study of GaN epitaxial layers for LED applications.
Keywords :
III-V semiconductors; epitaxial layers; light emitting diodes; optical fibres; photoluminescence; probes; wide band gap semiconductors; InGaN-GaN; LED epi-wafer morphology; epitaxial layers; fiber-optic probes; photoluminescence measurement system; Gallium nitride; Light emitting diodes; Measurement by laser beam; Optical fibers; Spatial resolution; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6600385
Filename :
6600385
Link To Document :
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