• DocumentCode
    3063060
  • Title

    Development of the measurement method of dielectric constant of low-k film in the millimeter wave region

  • Author

    Kawate, Etsuo ; Prijamboedi, Bambang

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
  • fYear
    2004
  • fDate
    27 Sept.-1 Oct. 2004
  • Firstpage
    801
  • Lastpage
    802
  • Abstract
    We have developed a free-space transmittance measurement method to study the dielectric property of a thin and low-dielectric (low-k) film in the millimeter wave region. The discovery is that multi-reflection keeps the height of the repeated peaks of the transmittance almost constant and that their widths quickly narrow with increase in the incident angle. We report the relative transmittance spectrum obtained from a 10 μm thick silicon dioxide film on a 700 μm thick silicon substrate near the electromagnetic waves of frequency 65 GHz.
  • Keywords
    dielectric thin films; millimetre wave spectra; permittivity; silicon; silicon compounds; 10 micron; 65 GHz; 700 micron; SiO2-Si-SiO2; dielectric constant; electromagnetic waves; free space transmittance measurement method; low dielectric film; low-k film; millimeter wave region; silicon dioxide film; silicon substrate; thin dielectric film; transmittance spectrum; Dielectric constant; Dielectric measurements; Dielectric thin films; Electromagnetic scattering; Frequency; Millimeter wave measurements; Millimeter wave technology; Semiconductor films; Silicon compounds; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
  • Print_ISBN
    0-7803-8490-3
  • Type

    conf

  • DOI
    10.1109/ICIMW.2004.1422337
  • Filename
    1422337