DocumentCode
3063060
Title
Development of the measurement method of dielectric constant of low-k film in the millimeter wave region
Author
Kawate, Etsuo ; Prijamboedi, Bambang
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
fYear
2004
fDate
27 Sept.-1 Oct. 2004
Firstpage
801
Lastpage
802
Abstract
We have developed a free-space transmittance measurement method to study the dielectric property of a thin and low-dielectric (low-k) film in the millimeter wave region. The discovery is that multi-reflection keeps the height of the repeated peaks of the transmittance almost constant and that their widths quickly narrow with increase in the incident angle. We report the relative transmittance spectrum obtained from a 10 μm thick silicon dioxide film on a 700 μm thick silicon substrate near the electromagnetic waves of frequency 65 GHz.
Keywords
dielectric thin films; millimetre wave spectra; permittivity; silicon; silicon compounds; 10 micron; 65 GHz; 700 micron; SiO2-Si-SiO2; dielectric constant; electromagnetic waves; free space transmittance measurement method; low dielectric film; low-k film; millimeter wave region; silicon dioxide film; silicon substrate; thin dielectric film; transmittance spectrum; Dielectric constant; Dielectric measurements; Dielectric thin films; Electromagnetic scattering; Frequency; Millimeter wave measurements; Millimeter wave technology; Semiconductor films; Silicon compounds; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN
0-7803-8490-3
Type
conf
DOI
10.1109/ICIMW.2004.1422337
Filename
1422337
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